JPS6246072B2 - - Google Patents

Info

Publication number
JPS6246072B2
JPS6246072B2 JP57181001A JP18100182A JPS6246072B2 JP S6246072 B2 JPS6246072 B2 JP S6246072B2 JP 57181001 A JP57181001 A JP 57181001A JP 18100182 A JP18100182 A JP 18100182A JP S6246072 B2 JPS6246072 B2 JP S6246072B2
Authority
JP
Japan
Prior art keywords
region
film
layer
collector
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57181001A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5968963A (ja
Inventor
Tadashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57181001A priority Critical patent/JPS5968963A/ja
Publication of JPS5968963A publication Critical patent/JPS5968963A/ja
Publication of JPS6246072B2 publication Critical patent/JPS6246072B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP57181001A 1982-10-13 1982-10-13 半導体装置及びその製造方法 Granted JPS5968963A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57181001A JPS5968963A (ja) 1982-10-13 1982-10-13 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57181001A JPS5968963A (ja) 1982-10-13 1982-10-13 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS5968963A JPS5968963A (ja) 1984-04-19
JPS6246072B2 true JPS6246072B2 (en]) 1987-09-30

Family

ID=16092993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57181001A Granted JPS5968963A (ja) 1982-10-13 1982-10-13 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS5968963A (en])

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62252969A (ja) * 1986-04-25 1987-11-04 Toshiba Corp 半導体装置の製造方法
JPS6393151A (ja) * 1986-10-07 1988-04-23 Toshiba Corp 半導体装置
JP2010135709A (ja) * 2008-12-03 2010-06-17 Motohiro Oda 新構造半導体集積回路

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54107279A (en) * 1978-02-10 1979-08-22 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5968963A (ja) 1984-04-19

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